首页 Texas Instruments(德州仪器) 通用运算放大器 LPC660
型号LPC660 |
品牌 |
分类通用运算放大器 |
描述四路、15V、350kHz 运算放大器 |
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产品概述参数 Number of channels | 4 | Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 15 | Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 5 | Rail-to-rail | In to V-, Out | GBW (typ) (MHz) | 0.35 | Slew rate (typ) (V/µs) | 0.11 | Vos (offset voltage at 25°C) (max) (mV) | 3 | Iq per channel (typ) (mA) | 0.04 | Vn at 1 kHz (typ) (nV√Hz) | 42 | Rating | Catalog | Operating temperature range (°C) | -40 to 85 | Offset drift (typ) (V/°C) | 0.0000013 | Input bias current (max) (pA) | 20 | CMRR (typ) (dB) | 83 | Iout (typ) (A) | 0.021 | Architecture | CMOS | Input common mode headroom (to negative supply) (typ) (V) | -0.4 | Input common mode headroom (to positive supply) (typ) (V) | -1.9 | Output swing headroom (to negative supply) (typ) (V) | 0.004 | Output swing headroom (to positive supply) (typ) (V) | -0.013 |
封装 | 引脚 | 尺寸 SOIC (D) | 14 | 51.9 mm² 8.65 x 6 |
特性 - Rail-to-rail output swing
- Micropower operation: (1 mW)
- Specified for 100 kΩ and 5 kΩ loads
- High voltage gain: 120 dB
- Low input offset voltage: 3 mV
- Low offset voltage drift: 1.3 μV/°C
- Ultra low input bias current: 2 fA
- Input common-mode includes V−
- Operation range from +5V to +15V
- Low distortion: 0.01% at 1 kHz
- Slew rate: 0.11 V/μs
- Full military temp. range available
All trademarks are the property of their respective owners. 说明 The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features. |