型号LMC660
品牌
分类通用运算放大器
描述四路、15.5V、1.4MHz 运算放大器
相关操作
产品概述

参数

Number of channels 4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.75
Rail-to-rail In to V-, Out
GBW (typ) (MHz) 1.4
Slew rate (typ) (V/µs) 1.1
Vos (offset voltage at 25°C) (max) (mV) 3
Iq per channel (typ) (mA) 0.38
Vn at 1 kHz (typ) (nV√Hz) 22
Rating Catalog
Operating temperature range (°C) -40 to 85, 0 to 70
Offset drift (typ) (V/°C) 0.0000013
Input bias current (max) (pA) 2
CMRR (typ) (dB) 83
Iout (typ) (A) 0.021
Architecture CMOS
Input common mode headroom (to negative supply) (typ) (V) -0.4
Input common mode headroom (to positive supply) (typ) (V) -1.9
Output swing headroom (to negative supply) (typ) (V) 0.1
Output swing headroom (to positive supply) (typ) (V) -0.13

封装 | 引脚 | 尺寸

PDIP (N) 14 181.42 mm² 19.3 x 9.4
SOIC (D) 14 51.9 mm² 8.65 x 6

特性

  • Rail-to-Rail Output Swing
  • Specified for 2 kΩ and 600Ω Loads
  • High Voltage Gain: 126 dB
  • Low Input Offset Voltage: 3 mV
  • Low Offset Voltage Drift: 1.3 μV/°C
  • Ultra Low Input Bias Current: 2 fA
  • Input Common-Mode Range Includes V−
  • Operating Range from +5V to +15.5V Supply
  • ISS = 375 μA/Amplifier; Independent of V+
  • Low Distortion: 0.01% at 10 kHz
  • Slew Rate: 1.1 V/μs

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说明

The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15.5V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 kΩ and 600Ω) are all equal to or better than widely accepted bipolar equivalents.

This chip is built with TI's advanced Double-Poly Silicon-Gate CMOS process.

See the LMC662 datasheet for a dual CMOS operational amplifier with these same features.