首页 Texas Instruments(德州仪器) 通用运算放大器 LF444
型号LF444 |
品牌 |
分类通用运算放大器 |
描述四路、36V、1MHz、输入接近 V+、JFET 输入运算放大器 |
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产品概述参数 Number of channels | 4 | Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 | Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 6 | Rail-to-rail | In to V+ | GBW (typ) (MHz) | 1 | Slew rate (typ) (V/µs) | 1 | Vos (offset voltage at 25°C) (max) (mV) | 5 | Iq per channel (typ) (mA) | 0.15 | Vn at 1 kHz (typ) (nV√Hz) | 35 | Rating | Catalog | Operating temperature range (°C) | 0 to 70 | Offset drift (typ) (V/°C) | 0.00001 | Input bias current (max) (pA) | 50 | CMRR (typ) (dB) | 100 | Iout (typ) (A) | 0.014 | Architecture | FET | Input common mode headroom (to negative supply) (typ) (V) | 4 | Input common mode headroom (to positive supply) (typ) (V) | -5 | Output swing headroom (to negative supply) (typ) (V) | 2 | Output swing headroom (to positive supply) (typ) (V) | -2 |
封装 | 引脚 | 尺寸 PDIP (N) | 14 | 181.42 mm² 19.3 x 9.4 | SOIC (D) | 14 | 51.9 mm² 8.65 x 6 |
特性 - ¼ Supply Current of a LM148: 200 μA/Amplifier (max)
- Low Input Bias Current: 50 pA (max)
- High Gain Bandwidth: 1 MHz
- High Slew Rate: 1 V/μs
- Low Noise Voltage for Low Power 35 nV/√Hz
- Low Input Noise Current 0.01 pA/√Hz
- High Input Impedance: 1012Ω
- High Gain: 50k (min)
All trademarks are the property of their respective owners. 说明 The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while greatly improving the DC characteristics of the LM148. The amplifier has the same bandwidth, slew rate, and gain (10 kΩ load) as the LM148 and only draws one fourth the supply current of the LM148. In addition the well matched high voltage JFET input devices of the LF444 reduce the input bias and offset currents by a factor of 10,000 over the LM148. The LF444 also has a very low equivalent input noise voltage for a low power amplifier. The LF444 is pin compatible with the LM148 allowing an immediate 4 times reduction in power drain in many applications. The LF444 should be used wherever low power dissipation and good electrical characteristics are the major considerations. |