型号LPV358-N
品牌
分类通用运算放大器
描述双路、5V、152kHz、低静态电流 (7μA)、RRO 运算放大器
相关操作
产品概述

参数

Number of channels 2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.7
Rail-to-rail In to V-, Out
GBW (typ) (MHz) 0.152
Slew rate (typ) (V/µs) 0.1
Vos (offset voltage at 25°C) (max) (mV) 7
Iq per channel (typ) (mA) 0.007
Vn at 1 kHz (typ) (nV√Hz) 146
Rating Catalog
Operating temperature range (°C) -40 to 85
Offset drift (typ) (V/°C) 0.000002
Input bias current (max) (pA) 50000
CMRR (typ) (dB) 71
Iout (typ) (A) 0.017
Architecture Bipolar
Input common mode headroom (to negative supply) (typ) (V) 0.0105
Input common mode headroom (to positive supply) (typ) (V) 0.007
Output swing headroom (to negative supply) (typ) (V) 0.09
Output swing headroom (to positive supply) (typ) (V) -0.0035

封装 | 引脚 | 尺寸

SOIC (D) 8 29.4 mm² 4.9 x 6
VSSOP (DGK) 8 14.7 mm² 3 x 4.9

特性

  • Specified 2.7-V and 5-V Performance
  • No Crossover Distortion
  • Space-Saving Package
    • 5-Pin SC70 2 × 2.1 × 1 mm
  • Industrial Temperature Range: –40°C to 85°C
  • Gain-Bandwidth Product: 152 kHz
  • Low Supply Current
    • LPV321-N: 9 µA
    • LPV358-N: 15 µA
    • LPV324-N: 28 µA
  • Rail-to-Rail Output Swing at 100 kΩ :
    • V+ – 3.5 mV
    • V– + 90 mV
  • VCM, –0.2 V to V+ – 0.8 V

说明

The LPV3xx-N are low power (9-µA per channel at 5 V) versions of the LMV3xx op amps. This is another addition to the LMV family of commodity op amps.

The LPV3xx-N are the most cost effective solutions for the applications where low voltage, low power operation, space saving and low price are needed. The LPV3xx-N have rail-to-rail output swing capability and the input common-mode voltage range includes ground. They all exhibit excellent speed-power ratio, achieving 152 kHz of bandwidth with a supply current of only 9 µA.

The LPV321-N is available in space saving 5-Pin SC70, which is approximately half the size of 5-Pin SOT-23. The small package saves space on PC boards, and enables the design of small portable electronic devices. It also allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity.

The chips are built with Texas Instruments's advanced submicron silicon-gate BiCMOS process. The LPV3xx-N have bipolar input and output stages for improved noise performance and higher output current drive.