型号TLV2352
品牌
分类比较器
描述双路低电压 LinCMOS™ 差分比较器
相关操作
产品概述

参数

Number of channels 2
Output type Open-collector
Propagation delay time (µs) 0.65
Vs (max) (V) 8
Vs (min) (V) 2
Vos (offset voltage at 25°C) (max) (mV) 5
Iq per channel (typ) (mA) 0.07
Input bias current (±) (max) (nA) 2
Rail-to-rail Out
Rating Catalog
Operating temperature range (°C) -40 to 85
VICR (max) (V) 7
VICR (min) (V) 0

封装 | 引脚 | 尺寸

PDIP (P) 8 92.5083 mm² 9.81 x 9.43
SOIC (D) 8 29.4 mm² 4.9 x 6
TSSOP (PW) 8 19.2 mm² 3 x 6.4

特性

  • Wide Range of Supply Voltages
    2 V to 8 V
  • Fully Characterized at 3 V and 5 V
  • Very-Low Supply-Current Drain
    120 uA Typ at 3V
  • Output Compatible With TTL, MOS, and CMOS
  • Fast Response Time . . . 200 ns Typ for TTL-Level Input Step
  • High Input Impedance . . . 1012 Typ
  • Extremely Low Input Bias Current
    5 pA Typ
  • Common-Mode Input Voltage Range Includes Ground
  • Built-In ESD Protection

    • LinCMOS is a trademark of Texas Instruments Incorporated.

说明

The TLV2352 consists of two independent, low-power comparators specifically designed for single power-supply applications and operates with power-supply rails as low as 2 V. When powered from a 3-V supply, the typical supply current is only 120 uA.

The TLV2352 is designed using the Texas Instruments LinCMOSTM technology and therefore features an extremely high input impedance (typically greater than 1012 ), which allows direct interfacing with high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from -40°C to 85°C. The TLV2352M is fully characterized at 3 V and 5 V for operation from -55°C to 125°C.

The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a 1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device as exposure to ESD may result in degradation of the device parametric performance.